Electrical Properties of Nanometer-Width Refractory Metal Lines Fabricated by Focused Ion Beam and Oxide Resists
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S)
- https://doi.org/10.1143/jjap.31.4483
Abstract
Nanometer-width refractory metal lines are generated on Si substrates with high resolution by focused ion beam (FIB) exposure to MoO3 and WO3 inorganic resists, development and subsequent reduction in dry H2 gas. On the basis of some experiments for optimizing the process parameters, the electrical properties of fabricated fine Mo and W lines are evaluated in terms of the sheet resistance and its temperature dependence. A 40-nm-wide line did not show any signs of electromigration after the electrical measurements at current densities of 105 A/cm2 for several tens of minutes.Keywords
This publication has 8 references indexed in Scilit:
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide ResistsJapanese Journal of Applied Physics, 1991
- Preparation of Metallic W Film by H2-Reduction of WO3 Electron-Resist FilmJapanese Journal of Applied Physics, 1991
- Focused Ion Beam Fabrication of Fine Metal Structures by Oxide ResistsJapanese Journal of Applied Physics, 1990
- Microlithographic behavior of transition metal oxide resists exposed to focused ion beamJournal of Vacuum Science & Technology B, 1990
- Focused Ion Beam Lithography with Transition Metal Oxide ResistsJapanese Journal of Applied Physics, 1989
- MoO3 Electron Resist and Its Application to Fabrication of Mo Fine PatternJapanese Journal of Applied Physics, 1986
- Hydrogen insertion in oxidesSolid State Ionics, 1986
- Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloysApplied Physics Letters, 1982