Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition

Abstract
Transparent ZnO thin film transistor (TFT) array of (106 dpi) was fabricated on glass substrate. The of the TFT with inverted coplanar structure is about 0.8 V and the mobility is . The active layer (ZnO), gate insulator , and source–drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source–drain electrode.