Picosecond carrier lifetime in erbium-doped-GaAs
- 8 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (10), 1128-1130
- https://doi.org/10.1063/1.108764
Abstract
The dependence of free‐carrier lifetime on erbium concentration has been measured in molecular‐beam epitaxial GaAs epilayers doped with erbium. A gradual reduction in the lifetime is observed with increased dopant incorporation. For a high doping concentration in the range of 1019 cm−3 or greater, a carrier lifetime of ∼1 ps is obtained. Due to the high resistivity of these epilayers, they can also be used as a photoconductive switch, with good responsivity. This leads to new and novel applications for rare‐earth doped III‐V semiconductorsKeywords
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