Picosecond optical electronic sampling: Characterization of high-speed photodetectors
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7), 599-601
- https://doi.org/10.1063/1.93612
Abstract
A photoconducting sampling gate which is triggered by a picosecond optical pulse and has an aperture of approximately 12 ps has been used to measure accurately the response of a high-speed, solid-state photodiode. The sample gate, which is made from a radiation-damaged semiconductor, is demonstrated to have better speed, lower noise level, negligible jitter, and fewer reflections than conventional sampling oscilloscopes. In addition, it can be used over a wide temperature range by direct mounting in a variable temperature cryostat.Keywords
This publication has 11 references indexed in Scilit:
- Picosecond InP optoelectronic switchesApplied Physics Letters, 1982
- Modulated barrier photodiode: A new majority-carrier photodetectorApplied Physics Letters, 1981
- Frequency and pulse response of a novel high-speed interdigital surface photoconductor (IDPC)IEEE Electron Device Letters, 1981
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- High-speed Ga0.47In0.53as photoconductive detector for picosecond light pulsesElectronics Letters, 1981
- Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductorsApplied Physics Letters, 1980
- Deep-level defects and diffusion length measurements in low energy proton-irradiated GaAsJournal of Electronic Materials, 1980
- An integrated photoconductive detector and waveguide structureApplied Physics Letters, 1980
- Optically strobed sampling oscilloscopeIEEE Transactions on Instrumentation and Measurement, 1976
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975