Plasma Etching of RuO2 Thin Films

Abstract

Plasma etching of RuO₂ thin films was studied. It was shown that reactive ion etching employing CF₄ or O₂ plasma is effective in delineating RuO₂ fine patterns. The etching rate was 2∼5 times higher than that for sputter etching. A higher etching rate and good selectivity were achieved using O₂ plasma. This result can be explained by the difference in volatility of the respective reaction species.