Scanning Tunneling Microscopy of Cubic Silicon Carbide Surfaces
- 1 November 1990
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 73 (11), 3264-3268
- https://doi.org/10.1111/j.1151-2916.1990.tb06448.x
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987
- Antiphase boundaries in epitaxially grown β-SiCApplied Physics Letters, 1987
- Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor depositionJournal of Crystal Growth, 1986
- Transmission electron microscopy of process-induced defects in β-SiC thin filmsJournal of Materials Research, 1986
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystalsJournal of Crystal Growth, 1984
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- A review of the structure of silicon carbideActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1969