InGaAsP/InGaP buried heterostructure lasers at 810 nm
- 1 December 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (11), 3086-3087
- https://doi.org/10.1063/1.333865
Abstract
InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 μm wide.Keywords
This publication has 9 references indexed in Scilit:
- Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPEElectronics Letters, 1984
- LPE Growth and Pulsed Room Temperature Laser Operation of In1-xGaxAszP1-z on (100) GaAs1-yPy (y\cong0.39)Japanese Journal of Applied Physics, 1982
- Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs SubstratesJapanese Journal of Applied Physics, 1981
- GaAs1−yPy heterojunction lasersJournal of Applied Physics, 1977
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- Visible GaAs0.7P0.3 cw heterojunction lasersApplied Physics Letters, 1977
- Yellow In1−xGaxP1−zAsz double-heterojunction lasersJournal of Applied Physics, 1976
- Low-threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double-heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K)Applied Physics Letters, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974