Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3), 31-37
- https://doi.org/10.1016/0039-6028(86)90381-x
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Photoemission and theoretical studies of GaAs(111) and (1¯ 1¯ 1¯) surfaces: Vacancy modelsPhysical Review B, 1985
- Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputersIEEE Transactions on Electron Devices, 1984
- High-magnetic-field transport in a dilute two-dimensional electron gasPhysical Review B, 1983
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAsJournal of Applied Physics, 1971
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970