SiGe strained-layer superlattices on Si(100), GeSi(100) and Si1−xGex/Si(100)
- 31 December 1989
- journal article
- research article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (1), 71-77
- https://doi.org/10.1016/0749-6036(89)90070-0
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Structural and electronic properties of epitaxial thin-layersuperlatticesPhysical Review B, 1988
- Theory of optical transitions in Si/Ge(001) strained-layer superlatticesPhysical Review B, 1987
- Silicon-Germanium SuperlatticesPublished by SPIE-Intl Soc Optical Eng ,1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Folded acoustic phonons in Si/strained-layer superlatticesPhysical Review B, 1987
- Ge-Si layered structures: Artificial crystals and complex cell ordered superlatticesApplied Physics Letters, 1986
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Folded acoustic phonons in Si-superlatticesPhysical Review B, 1986
- Stability of semiconductor strained-layer superlatticesApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985