Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 313-315
- https://doi.org/10.1063/1.94736
Abstract
Growth of epitaxial (100) CdTe films on (100) GaAs substrates by molecular beam epitaxy is discussed. X‐ray diffraction, UV reflectance, photoluminescence, and transmission electron microscopy techniques were employed to characterize the film specimens. The high structural perfection of the layers was evidenced by line dislocation densities of ≤104/cm2 at the free surface of films ≂6.6 μm thick and by measurable excitonic photoluminescence (∼1.504 eV) at room temperature. The CdTe epilayers were smooth and mirrorlike in appearance.Keywords
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