Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K)
- 20 February 2000
- journal article
- Published by Elsevier in Surface Science
- Vol. 447 (1-3), 156-164
- https://doi.org/10.1016/s0039-6028(99)01166-8
Abstract
No abstract availableKeywords
Funding Information
- Life Science Center for Survival Dynamics Tsukuba Advanced Research Alliance
- Ministry of Education, Culture, Sports, Science and Technology
- University of Tsukuba
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