The first 70 semiconductor Auger processes
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12), 1289-1294
- https://doi.org/10.1016/0038-1101(78)90195-8
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Auger lifetimes for excitons bound to neutral donors and acceptors in SiPhysica Status Solidi (b), 1977
- Auger coefficient of GaP(Zn,O). I. Evaluation from the luminescence decayPhysical Review B, 1977
- The internal radiative efficiency and the mechanism of temperature quenching of the 1.03, 1.20, and 1.30 eV emission bands in n-GaAsPhysica Status Solidi (a), 1976
- A formalism for the indirect Auger effect. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1976
- Electric field dependence of a two-electron transition processPhysica Status Solidi (a), 1971
- Band-to-band auger recombination in indirect gap semiconductorsPhysica Status Solidi (a), 1971
- An electron collision process involving a two-level centre in semiconductorsPhysica Status Solidi (a), 1971
- Overlap Integrals for Bloch ElectronsProceedings of the Physical Society, 1963
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Radiationless Recombination in PhosphorsPhysical Review B, 1958