Schottky barrier heights of molecular beam epitaxial metal-AlGaAs structures
- 15 April 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (8), 636-638
- https://doi.org/10.1063/1.92461
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Photovoltaic effect and Schottky barriers in the Au–In1−xGaxSb systemCanadian Journal of Physics, 1980
- Schottky barrier height of Au on n-type Ga1−xAlxSb (0.0≤x≤0.65)Electronics Letters, 1980
- The Schottky-barrier height of Au on n-Ga1−xAlxAs as a function of AlAs contentApplied Physics Letters, 1979
- Surface composition and characteristics of oxide-free Ga1–xAlxAs (110) Schottky barriersJournal of Vacuum Science and Technology, 1979
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- Schottky barriers on compound semiconductors: The role of the anionJournal of Vacuum Science and Technology, 1976
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973
- Metal-semiconductor surface barriersSolid-State Electronics, 1966