Inelastic electron scattering and incoherent x-ray scattering in silicon at small angles

Abstract

Calculations of the intensity of incoherent x-ray scattering (I_inc) from Si at small angles have been made using the full Waller-Hartree expression for comparison with the experimental results of Weinberg (1964). The agreement between calculation and experiment is poor for the entire angular range of the results (corresponding to q=(4π/λ)sin⊘/2 from 0.2 to 1.3 Å⁻¹, where ⊘ is the angle of scattering). Since I_inc appears in the formulation of inelastic electron scattering by free atoms, it is pointed out that this formulation should be applied with caution to an interpretation of small-angle electron scattering by metal films.