InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition
- 26 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (23), 3438-3440
- https://doi.org/10.1063/1.124120
Abstract
We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm2.Keywords
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