Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation Detectors
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 13 (1), 36-42
- https://doi.org/10.1109/TNS.1966.4323942
Abstract
Characterization of the gallium diffused junctions found useful as amplifying radiation detectors indicate a rather surprising window-junction depth relationship. The window, at only the self bias of the junction, has been measured to be a micron or so although the junction depth is ~50 microns. This is a result of the unusual diffusion process used - diffusion to 75 microns with subsequent removal of the heavily acceptor doped, first 25 micron region. Because of potential for low energy detection of these structures (which require thin windows) stress is placed upon window measurements. Measurements made of the response of these structures as photon detectors in the near infrared (0.7 - 1.1 micron) wavelength region are reported. Also initial results which indicate that the x-ray cutoff for these structures lies in the 44-60 Angstrom range.Keywords
This publication has 5 references indexed in Scilit:
- Internal Pulse Amplification in High Field, Silicon Radiation Detection JunctionsIEEE Transactions on Nuclear Science, 1965
- Internal Pulse Amplification in Silicon p-n Junction Radiation Detection JunctionsReview of Scientific Instruments, 1964
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Stable, High Field Silicon p-n Junction Radiation DetectorsReview of Scientific Instruments, 1963
- The Window Thickness of Diffused Junction DetectorsIRE Transactions on Nuclear Science, 1962