Electronic properties of glassy Pt-Si films
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12), 8643-8648
- https://doi.org/10.1103/physrevb.33.8643
Abstract
Glassy films of Pt-Si alloys have been produced by pulsed laser quenching in the composition range of 40 to 93 at.?Si. The electronic properties were investigated by conductivity measurements and ellipsometric determination of the complex dielectric function from 1.4 to 5.5 eV. The system exhibits a metal-nonmetal transition near 20 at.?Pt. The applicability of classical Drude-Lorentz modeling and the influence of the short-range order on the electronic properties is discussed.Keywords
This publication has 15 references indexed in Scilit:
- Polarization modulation ellipsometry: A compact and easy handling instrumentReview of Scientific Instruments, 1985
- Optical properties of laser-melt-quenched Au-Si alloysPhysical Review B, 1983
- Metal-insulator transitions in amorphous semiconductorsPhilosophical Magazine Part B, 1980
- Ion-beam induced metastable Pt2Si3 phase. I. Formation, structure, and propertiesJournal of Applied Physics, 1980
- Metastable phases in laser-irradiated Pt-Si and Pd-Si thin filmsApplied Physics Letters, 1980
- Hall-effect measurements and the electronic structure of amorphous Pd-Si-(Cu) alloysPhysical Review B, 1980
- Optical properties of metallic glassesSolid State Communications, 1979
- Formation of Si-enriched metastable compounds in the Pt-Si system using ion bombardment and post annealingPhysics Letters A, 1979
- Non-crystalline Structure in Solidified Gold–Silicon AlloysNature, 1960
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958