Optical Photogenerated Traps in Semi-Insulating GaAs Bulk Material
- 1 September 1984
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 30 (3), 198-200
- https://doi.org/10.1088/0031-8949/30/3/007
Abstract
We report in this paper on a photogeneration of traps in semi-insulating GaAs (Horizontal Bridgman and Czochralski) under YAG excitation. We have experimentally observed this phenomenon from TSC (Thermally Stimulated Current) and near intrinsic (1.42 eV) photoconductivity after YAG excitation. The results provide evidence that YAG excitation introduces changes in the distribution of the band gap levels.Keywords
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