Collective investigations on two typical semi-insulating GaAs ingots
- 31 October 1981
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 16 (10), 1193-1212
- https://doi.org/10.1016/0025-5408(81)90089-1
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Influence of growth parameters on CdTe low temperature thermal conductivityJournal of Applied Physics, 1980
- Chromium as a hole trap in GaP and GaAsApplied Physics Letters, 1980
- EPR determination of the concentration of chromium charge states in semi-insulating GaAs : CrJournal of Applied Physics, 1979
- Measurement of the chromium concentration in semi-insulating GaAs using optical absorptionJournal of Applied Physics, 1979
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESRSolid State Communications, 1976
- Thermal conductivity of Cr-doped GaAs at low temperatureJournal of Applied Physics, 1975
- Réalisation d'un dispositif de mesure de la conductibilité thermique des solides à basses températuresRevue de Physique Appliquée, 1968
- Phonon Scattering in Semiconductors From Thermal Conductivity StudiesPhysical Review B, 1964