Impurities in single crystal indium phosphide
- 1 November 1980
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 15 (11), 2785-2794
- https://doi.org/10.1007/bf00550547
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Acceptor excited states in indium phosphideSolid State Communications, 1979
- Hole traps in n-InP by d.l.t.s. and transient capacitance techniquesElectronics Letters, 1979
- Photocapacitance effects of deep traps in n-type InPJournal of Applied Physics, 1978
- Deep traps in ideal n-InP Schottky diodesElectronics Letters, 1978
- Concentrations of carbon and oxygen in indium phosphide and gallium arsenide crystals grown by the lec techniqueJournal of Electronic Materials, 1976
- LEC growth of large InP single crystalsJournal of Crystal Growth, 1976
- Developments in the weighing method of automatic crystal pullingJournal of Crystal Growth, 1974
- Crystal growth and properties of group IV doped indium phosphideJournal of Crystal Growth, 1972