Crystal growth and properties of group IV doped indium phosphide
- 31 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 640-646
- https://doi.org/10.1016/0022-0248(72)90534-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971
- Electron mobilities and photoluminescence of solution grown indiumphosphide single crystalsJournal of Physics and Chemistry of Solids, 1970
- Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in-Type GaAsPhysical Review B, 1969
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968
- Notizen: Die Dotierung von ΑIIIΒV-Verbindungen mit Elementen der vierten Gruppe des Periodischen SystemsZeitschrift für Naturforschung A, 1957
- Herstellung und elektrische Eigenschaften von InP und GaAsZeitschrift für Naturforschung A, 1955