Surface structures and conductance at epitaxial growths of Ag and Au on the Si(111) surface
- 24 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (8), 1192-1195
- https://doi.org/10.1103/physrevlett.68.1192
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfacesPhysical Review Letters, 1990
- Rheed intensity and electrical resistivity oscillations during metallic film growthSurface Science, 1989
- Quantum size and surface effects in the electrical resistivity and high-energy electron reflectivity of ultrathin lead filmsPhysical Review B, 1988
- Resistance oscillations and crossover in ultrathin gold filmsPhysical Review B, 1988
- Effect of Cs Adsorption on Surface Impedance of Thermally-Cleaned Si(111)7×7 WaferJapanese Journal of Applied Physics, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Adsorption and electric measurements on germanium (111) surfaces covered with potassium and cesiumSurface Science, 1979
- Surface States on Clean and on Cesium‐Covered Cleaved Silicon SurfacesPhysica Status Solidi (b), 1970
- Energy Structure in Photoelectric Emission from Cs-Covered Silicon and GermaniumPhysical Review B, 1966