Photoelectron spectroscopy of surface states on semiconductor surfaces
- 1 August 1988
- journal article
- review article
- Published by Elsevier in Surface Science Reports
- Vol. 9 (5-6), 197-292
- https://doi.org/10.1016/0167-5729(88)90003-9
Abstract
No abstract availableKeywords
This publication has 282 references indexed in Scilit:
- Optical properties and atomic structure of cleaved silicon and germanium (111) surfacesSurface Science Reports, 1986
- Electronic structure and geometry of group IV semiconductor surfacesPhysica B+C, 1983
- Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)Physica B+C, 1983
- Study of III–V semiconductor band structure by synchrotron photoemissionPhysica B+C, 1983
- On the electronic structure of the Si(100)−2×1 surfacePhysica B+C, 1983
- Angular resolved photoemission measurements on clean and hydrogen covered Ge(111) surfacesApplications of Surface Science, 1982
- Electronic surface states of II–VI compound semiconductorsApplications of Surface Science, 1982
- Angle-resolved ultraviolet photoemission spectroscopy of the Si(001) surfaceApplications of Surface Science, 1980
- Defect-induced surface states on cleaved GaAs (110)surfaces measured in UV photoemissionPhysica Status Solidi (b), 1979
- Electronic structure and atomic configuration at the cleavage surface of zincblende compoundsJournal of Physics C: Solid State Physics, 1977