Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 761-766
- https://doi.org/10.1016/0378-4363(83)90645-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and-Bonded ChainsPhysical Review Letters, 1982
- Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1Physical Review Letters, 1982
- New dimerized-chain model for the reconstruction of the diamond (111)-(2 × 1) surfacePhysical Review B, 1982
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Spin Polarization and Atomic Geometry of the Si(111) SurfacePhysical Review Letters, 1981
- Surface states on Si(111)-(2×1)Physical Review B, 1981
- Nature of the Si(111)7 × 7 reconstructionPhysical Review B, 1981
- New Model for Reconstructed Si(111) 7 × 7 Surface SuperlatticesPhysical Review Letters, 1980
- Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status reportJournal of Vacuum Science and Technology, 1980
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978