Effects of boron penetration and resultant limitations in ultra thin pure-oxide and nitrided-oxide gate-films
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in BF2 implanted P+ gate p-channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990