Excitation spectra of group III impurities in germanium
- 1 July 1965
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 26 (7), 1125-1131
- https://doi.org/10.1016/0022-3697(65)90008-9
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Effect of Uniaxial Stress on the Excitation Spectra of Donors in SiliconPhysical Review B, 1965
- An Optical Determination of the Ground-State Splittings of Group V Impurities in GermaniumPhysical Review B, 1964
- Dielectric correlation to shallow impurity ground state in siliconSolid State Communications, 1964
- Wave functions and energies of shallow acceptor states in germaniumJournal of Physics and Chemistry of Solids, 1964
- Effect of Spin-Orbit Coupling and Other Relativistic Corrections on Donor States in Ge and SiPhysical Review B, 1964
- Corrections to the ground state energies of shallow donors in silicon and germaniumJournal of Physics and Chemistry of Solids, 1963
- OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICONCanadian Journal of Physics, 1962
- Optical and Magneto-Optical Absorption Effects of Group III Impurities in GermaniumPhysical Review Letters, 1959
- Theory of Donor States in SiliconPhysical Review B, 1955
- Hyperfine Splitting of Donor States in SiliconPhysical Review B, 1955