Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements
- 31 October 2007
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 84 (9-10), 2230-2234
- https://doi.org/10.1016/j.mee.2007.04.094
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- An Assessment of the Location of As-Grown Electron Traps in$hboxHfO_2$/HfSiO StacksIEEE Electron Device Letters, 2006
- Depth Profiling of Border Traps in MOSFET With High-$kappa$Gate Dielectric by Charge-Pumping TechniqueIEEE Electron Device Letters, 2006
- Spatial distributions of trapping centers in HfO2∕SiO2 gate stacksApplied Physics Letters, 2006
- Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemissionMicroelectronic Engineering, 2005
- Influence of$hbox Al_2hbox O_3$Dielectrics on the Trap-Depth Profiles in MOS Devices Investigated by the Charge-Pumping MethodIEEE Transactions on Electron Devices, 2004
- Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devicesIEEE Transactions on Nuclear Science, 2002
- In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping techniqueIEEE Transactions on Electron Devices, 1997
- Noise as a diagnostic tool for quality and reliability of electronic devicesIEEE Transactions on Electron Devices, 1994
- 1/f noise and radiation effects in MOS devicesIEEE Transactions on Electron Devices, 1994
- A 1/f noise technique to extract the oxide trap density near the conduction band edge of siliconIEEE Transactions on Electron Devices, 1989