Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks
- 10 April 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (15), 152907
- https://doi.org/10.1063/1.2195896
Abstract
A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial layer rather than in the bulk of the high- film.
Keywords
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