In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (12), 2262-2266
- https://doi.org/10.1109/16.644648
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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