DIAMOND SYNTHESIS BY DC PLASMA JET CVD
- 1 January 1991
- journal article
- research article
- Published by Taylor & Francis in Materials and Manufacturing Processes
- Vol. 6 (2), 241-256
- https://doi.org/10.1080/10426919108934755
Abstract
This paper reviews our research on diamond synthesis by etc plasma jet CVD. The unique feature of this method is supplying high radical density plasma to a substrate by quenching a thermal plasma. The maximum growth rate is 200 μm/h. The crystallinity measures well in terms of x-ray diffraction and Raman spectroscopy. The morphology of diamond film is affected strongly by methane concentration and the spacing between the torch nozzle and substrate. Plasma analysis by optical emission spectroscopy indicates that the plasma jet is not in equilibrium and contains many activated radicals. This paper also describes our application of a thick diamond film to the heat sink of a laser diode.Keywords
This publication has 9 references indexed in Scilit:
- Diamond Synthesis By DC Plasma Jet CVDPublished by SPIE-Intl Soc Optical Eng ,1990
- Morphology of Diamond Films Grown by DC Plasma Jet CVDMRS Proceedings, 1989
- High rate synthesis of diamond by dc plasma jet chemical vapor depositionApplied Physics Letters, 1988
- Synthesis of diamond films in a rf induction thermal plasmaApplied Physics Letters, 1987
- Growth of diamond thin films by dc plasma chemical vapor depositionApplied Physics Letters, 1987
- Synthesis of Diamond Thin Films by Thermal CVD Using Organic CompoundsJapanese Journal of Applied Physics, 1986
- Diamond synthesis from gas phase in microwave plasmaJournal of Crystal Growth, 1983
- Growth of diamond particles from methane-hydrogen gasJournal of Materials Science, 1982
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981