Be+/P+ and Be+/As+ dual implantations into AlxGa1−xAs

Abstract

Dual implantations of Be⁺/P⁺ (Be⁺ and P⁺ ions) and Be⁺/As⁺ (Be⁺ and As⁺ ions) into Al_0.3 Ga_0.7 As are carried out, and electrical properties of the implanted layers are evaluated by Hall‐effect measurements. Improved electrical activity is observed for the dual implant compared with the single implant. In particular, in the case of the Be⁺/P⁺ dual implant, apparent hole concentration becomes nearly twice as high as that of the Be⁺ single implant at annealing temperatures above 650 °C. The dual implantation technique also greatly suppresses redistribution of Be atoms, and so Gaussian‐type profiles remain, even after high‐temperature annealing (∼950 °C).