Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1R), 95-98
- https://doi.org/10.1143/jjap.25.95
Abstract
The desorption of Ga atoms from GaAs films at high substrate temperatures was utilized as an etch-back method for the reduction of highly-resistive layers formed around growth-interrupted interfaces in Si-doped GaAs. The mechanism of the reduction of the highly-resistive layer was studied by a C-V carrier profiling technique, secondary-ion mass spectroscopy and deep-level transient spectroscopy, and was clarified as being due to compensation by Si atoms accumulated on the GaAs surface during the thermal etching procedure.Keywords
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