Hot-carrier luminescence in sub-quartermicrometer high-speed GaAs MESFET's
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (11), 2170-2177
- https://doi.org/10.1109/16.796293
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- 0.1 μm WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron cyclotron resonance ion stream etching with SF6–CF4–SiF4–O2Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- High-performance 0.1 μm-self-aligned-gate GaAs MESFET technologyIEEE Transactions on Electron Devices, 1997
- High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substratesIEEE Transactions on Electron Devices, 1997
- Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistorsIEEE Transactions on Electron Devices, 1995
- Impact ionization and light emission in GaAs metal-semiconductor field effect transistorsJournal of Applied Physics, 1993
- High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFETs with Au/WSiN T-shaped gateIEEE Transactions on Electron Devices, 1993
- Impact ionization and light emission in AlGaAs/GaAs HEMT'sIEEE Transactions on Electron Devices, 1992
- Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETsIEEE Transactions on Electron Devices, 1991
- Electromagnetic radiation from hot carriers in FET-devicesSolid-State Electronics, 1989
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976