A Monte Carlo simulation of the growth of Si(001)2×1: datom/SA step interactions and growth mechanisms
- 1 June 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 312 (1-2), 201-212
- https://doi.org/10.1016/0039-6028(94)90818-4
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Kinetic mechanism for the transformation of single-layer steps into double-layer steps by Si deposition on a vicinal Si(100) surfacePhysical Review B, 1992
- Sinuous step instability on the Si(001) surfacePhysical Review Letters, 1992
- Wavy steps on Si(001)Physical Review Letters, 1992
- Surface self-diffusion of Si on Si(001)Surface Science, 1992
- Adsorption and diffusion sites of a Si atom on a reconstructed Si(100)-(2 × 1) surfaceSurface Science, 1991
- A model for Si molecular-beam epitaxy based on scanning tunneling microscopy observations and computer simulationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Scanning tunneling microscopy of photoexcited carriers at the Si(001) surfaceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Imaging of dimer atoms of Si(100) with the scanning tunneling microscopeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Low energy electron microscopy of nanometer scale phenomenaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Epitaxial growth of silicon on Si(001) by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990