Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodes
- 15 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (2), 200-202
- https://doi.org/10.1063/1.90274
Abstract
It is shown that the time‐dependent capacitance change associated trap refilling in a Schottky diode is nonexponential, consisting in the sum of two contributions which reduce to a single one for reverse biases smaller than VSCO, the space‐charge crossover voltage. Determination of VSCO yields both the trap depth ΔE and its capture cross section. This is experimentally demonstrated for the oxygen‐related trap in n‐GaAs. We find ΔE=0.67 eV in good agreement with other determinations.Keywords
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