Band-gap narrowing in highly doped n- and p-type GaAs studied by photoluminescence spectroscopy
- 1 November 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (9), 4381-4386
- https://doi.org/10.1063/1.343958
Abstract
Band‐gap narrowing of GaAs as a function of doping concentration has been measured using photoluminescencespectroscopy on samples grown by molecular beam epitaxy. Both n‐ (Si) and p‐ (Be) doped samples with concentrations varying from 3×101 7 to 3×101 8 cm− 3 have been measured. The experimental results obtained from a line‐shape analysis of the spectra taking tailing effects into account are in good agreement with recent theoretical calculations. A simple expression for the band‐gap narrowing as a function of concentration for both n‐and p‐doped GaAs is given.Keywords
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