Conduction band density of states in impure GaAs
- 1 April 1968
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 29 (4), 615-622
- https://doi.org/10.1016/0022-3697(68)90029-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Impurity-Band Tails in the High-Density Limit. I. Minimum Counting MethodsPhysical Review B, 1966
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Injection Mechanisms in GaAs Diffused Electroluminescent JunctionsPhysical Review B, 1965
- Use of Electron Probes in the Study of Recombination RadiationJournal of Applied Physics, 1964
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960