Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
- 9 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10), 1241-1243
- https://doi.org/10.1063/1.107418
Abstract
Ultraviolet photoemission spectroscopy has been used to study the valence‐band offsets at GaInAs/InP and InP/GaInAs heterostructures grown by metalorganic molecular‐beam epitaxy. High‐resolution In‐4d/Ga‐3d core levels were used. The measured values are 440±50 meV for the ‘‘direct’’ (GaInAs grown on InP) interface and 260±50 meV for the ‘‘inverse’’ interface. This band‐offset asymmetry is attributed to a difference in the chemical natures of the two interfaces, deduced from the detailed analysis of the core‐level spectra.Keywords
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