Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy

Abstract

X‐ray photoemission spectroscopy (XPS) has been used to measure the valence‐band offset ΔE_v for the lattice‐matched InP/ In_0.53Ga_0.47As and In_0.53Ga_0.47As/ In_0.52Al_0.48As heterojunction interfaces. The heterojunctions were formed by molecular‐beam epitaxy. We obtain values of ΔE_v (InP/In_0.53Ga_0.47As) =0.34 eV (ΔE_c/ ΔE_v=43/57) and ΔE_v (In_0.53Ga_0.47As/ In_0.52Al_0.48As) =0.22 eV (ΔE_c/ ΔE_v =68/32) for the respective interfaces. By combining these measurements with available XPS ΔE_v (InP/ In_0.52Al_0.48As) data we find that band offset transitivity is satisfied. Accordingly, the band offsets for heterojunction pairs formed from InP, In_0.53Ga_0.47As, and In_0.52Al_0.48As are not influenced by interface specific effects.