Electrical Properties of n‐Type Epitaxial Gallium Arsenide
- 1 January 1966
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 17 (1), 67-76
- https://doi.org/10.1002/pssb.19660170109
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Effective Mass of Electrons in n‐GaAsPhysica Status Solidi (b), 1965
- C.W. X and K band radiation from GaAs epitaxial layersElectronics Letters, 1965
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Cryostat for measuring the electrical properties of high resistance semiconductors at low temperaturesJournal of Scientific Instruments, 1959
- Hall and Drift Mobilities; Their Ratio and Temperature Dependence in SemiconductorsPhysical Review B, 1957
- Electrical Properties of-Type GermaniumPhysical Review B, 1954