Heterostructure by solid-phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) system
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3), 917-919
- https://doi.org/10.1063/1.323708
Abstract
When a thin film of Pd reacts with a 〈111〉 Si substrate, a layer of epitaxial Pd2Si is formed. It is shown that Si can grow epitaxially on such a layer by solid‐phase reaction.This publication has 13 references indexed in Scilit:
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