Silicon molecular beam epitaxy with simultaneous ion implant doping
- 1 February 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2), 1102-1110
- https://doi.org/10.1063/1.327717
Abstract
Silicon epitaxial layers have been made with virtually any doping profile by combining molecular beam epitaxial growth with simultaneous ion implant doping. Arsenic ions (As+) accelerated to energies between 400 and 800 eV have shown a high sticking coefficient on the heated silicon surface. Growth conditions have been defined at which epitaxial films with bulk characteristics are obtained.Keywords
This publication has 6 references indexed in Scilit:
- Application of Si MBE to microwave hyperabrupt diodesIEEE Transactions on Electron Devices, 1979
- n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony EvaporationJournal of the Electrochemical Society, 1979
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- SEM observation of dopant striae in siliconJournal of Applied Physics, 1977
- Ionized Zn doping of GaAs molecular beam epitaxial filmsApplied Physics Letters, 1975
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962