Transient photodecay measurements as a probe of the density of localized states in amorphous semiconductors
- 28 February 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (8), 637-640
- https://doi.org/10.1016/0038-1098(85)90366-7
Abstract
No abstract availableKeywords
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