Can single-electron integrated circuits and quantum computers be fabricated in silicon?
- 1 November 2000
- journal article
- research article
- Published by Wiley in International Journal of Circuit Theory and Applications
- Vol. 28 (6), 553-562
- https://doi.org/10.1002/1097-007x(200011/12)28:6<553::aid-cta127>3.0.co;2-i
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writingApplied Physics Letters, 1999
- Double-island single-electron devices. A useful unit device for single-electron logic LSI'sIEEE Transactions on Electron Devices, 1999
- The initial stage of nucleation and growth of Al on H/Si(100)-1×1 by dimethylaluminum hydride vapor depositionApplied Surface Science, 1999
- A memory cell with single-electron and metal-oxide-semiconductor transistor integrationApplied Physics Letters, 1999
- Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 1999
- Logic circuit elements using single-electron tunnelling transistorsElectronics Letters, 1999
- Al Nucleation on Monohydride and Bare Si(001) Surfaces: Atomic Scale PatterningPhysical Review Letters, 1997
- Atomic-Scale Desorption Through Electronic and Vibrational Excitation MechanismsScience, 1995
- Nanoscale oxide patterns on Si(100) surfacesApplied Physics Letters, 1995
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994