Displacement of arsenic atoms in silicon crystal during irradiation
- 16 July 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 12 (1), K7-K8
- https://doi.org/10.1002/pssa.2210120138
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Temperature dependence of the minimum yield in channeling phenomenaPhysics Letters A, 1971
- Effects of crystal surface and imperfections on channeling phenomena of protonsPhysica Status Solidi (a), 1971
- Observations of arsenic atoms in silicon crystals by use of helium ion scatteringPhysica Status Solidi (a), 1971
- A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION-SCATTERING TECHNIQUEApplied Physics Letters, 1970
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967