Characterization of crystal defects at leakage sites in charge-coupled devices
- 1 January 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (1), 412-414
- https://doi.org/10.1063/1.323343
Abstract
Crystal defects have been identified at the sites of high leakage (spikes) in charge‐coupled devices operated in the integration mode. Oxidation‐induced stacking faults and dislocations were observed using x‐ray topography and selective etching, and identified by transmission electron microscopy. Electrical measurements showed that the stacking faults had a range of activity which is attributed to variation in the level of impurity decoration of the defects.Keywords
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