Energy levels and charge distributions of nonideal dangling and floating bonds in amorphous Si
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (2), 1134-1139
- https://doi.org/10.1103/physrevb.39.1134
Abstract
Defect-state wave functions and energies are calculated for numerous configurations of nonideal dangling and floating bonds in a-Si with use of Bethe-lattice-terminated clusters and a tight-binding approach. The energy eigenvalue for the dangling bond is highly dependent on deviations from ideality while the wave-function amplitudes are much less so. Exactly the opposite holds for the floating bond. The experimental consequences of these calculations are discussed.Keywords
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