Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers
- 7 April 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (14), 922-924
- https://doi.org/10.1063/1.96659
Abstract
Ga-doped silicon layers with constant profiles were grown by molecular beam epitaxy (MBE) at 650 °C and by solid phase epitaxy in the MBE system at a regrowth temperature 600 °C. By the latter technique, doping levels up to 2×1020 cm−3 were achieved. The electrical properties were investigated by temperature-dependent Hall measurements. The resulting hole concentration was compared with the Ga concentration, determined by neutron activation analysis: At room temperature the ionization of the Ga acceptor was concentration dependent and exhibited a minimum of 50% at 1019 cm−3. Comparison with B-doped silicon showed a significant lower mobility for carrier concentration above 1019 cm−3.Keywords
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