Characterization of Ga-doped solid phase — MBE silicon
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 73 (3), 482-486
- https://doi.org/10.1016/0022-0248(85)90011-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- p-type doping in Si molecular beam epitaxy by coevaporation of boronApplied Physics Letters, 1984
- Solid phase epitaxial growth anisotropy of vacuum-deposited amorphous siliconPhysica Status Solidi (a), 1984
- Doping of silicon in molecular beam epitaxy systems by solid phase epitaxyApplied Physics Letters, 1984
- Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) SubstratesJapanese Journal of Applied Physics, 1982
- A review of bulk unipolar diodes and their applicationsMicroelectronics Journal, 1982
- Growth kinetics of Si-molecular beam epitaxyApplied Physics A, 1982
- Resistivity‐Dopant Density Relationship for Boron‐Doped SiliconJournal of the Electrochemical Society, 1980