p-n-p-n charge dynamics
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (8), 1318-1330
- https://doi.org/10.1109/proc.1967.5833
Abstract
A simple unified charge model applicable to both unsaturated and saturated p-n-p-n dynamic behavior is analyzed. Expressions are obtained for three important dynamic conditions: di/dt prior to saturation, voltage drop during turn-on, and reverse current during recovery. Comparison with measurement shows that interdigitated gate p-n-p-n devices match one-dimensional turn-on theory and closely approximate the behavior of p-i-n rectifiers under similar pulsed conditiom. The major analytical simplifications of the one-dimensional theory are examined in the Appendixes. The limitations imposed by these simplifications can be avoided by use of numerical integration techniques.Keywords
This publication has 11 references indexed in Scilit:
- Probed determination of turn-on spread of large area thyristorsIEEE Transactions on Electron Devices, 1966
- High injection theories of the p−n junction in the charge neutrality approximationSolid-State Electronics, 1966
- The gate-triggered turn-on process in thyristorsSolid-State Electronics, 1965
- P+IN+ silicon diodes at high forward current densitiesSolid-State Electronics, 1965
- Uniform turn-on in four-layer diodesIRE Transactions on Electron Devices, 1961
- Turn-on Transient of p-n-p-n Triode †Journal of Electronics and Control, 1959
- Germanium P-N-P-N switchesIRE Transactions on Electron Devices, 1959
- The Electrical Characteristics of Silicon P-N-P-N TriodesProceedings of the IRE, 1958
- Multiterminal P-N-P-N SwitchesProceedings of the IRE, 1958
- P-N-P-N Transistor SwitchesProceedings of the IRE, 1956